triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 1 2 - 20 ghz gain block amplifier TGA8622-SCC key features and performance 2 to 20 ghz frequency range 7.5 db gain with greater than 30db gain-control capability 20 dbm output power at 1 db gain compression 7 db noise figure input and output swr 1.7:1 midband 2.769 x 2.159 x 0.152 mm (0.109 x 0.085 x 0.006 in.) description the triquint TGA8622-SCC is a broadband general-purpose amplifier that operates over the 2 to 20 ghz frequency range. six 200um dual-gate fets provide the amplifier with a typical gain of 7.5 db. midband input and output swrs are typically 1.7:1. this amplifier is directly cascadable and can be used in both gain control and active temperature compensation applications. ground is provided to the circuitry through vias to the backside metallization. the TGA8622-SCC is available in chip form and is readily assembled using automated equipment. the device bond pads and backside are gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. october 29, 2009
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 2 TGA8622-SCC typical output power p 1db vs. v ctrl typical small-signal power gain gp vs. v ctrl typical noise figure nf vs. v ctrl v ctrl for particular gain levels is shown for reference only and may vary from device to device.
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 3 TGA8622-SCC typical return loss
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 4 table i maximum ratings symbol parameter value v + positive supply voltage 8v v + - v - positive supply voltage range with respect to negative supply voltage 0v to 12v v - negative supply voltage range 0v to ?5v v ctrl gain control voltage range -5v to 4v v ctrl - v + gain control voltage range with respect to positive supply voltage 0v to ?10v i - negative gate current 12 ma p in input continuous wave power 26 dbm i + positive supply current 370ma p d power dissipation, at (or below) 25 c base-plate temperature * 2.9w t ch ** operating channel temperature 150 0 c t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c ratings over channel temperature range, t ch (unless otherwise noted) stresses beyond those listed under ?maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?rf specifications? is not implied. exposure to maximum rated conditions for extended periods may affect device reliab ility. *for operation above 25 c base-plate temperature, derate linearly at the rate of 6.1mw/ c. ** operating channel temperature, t ch , directly affects the device mttf. for maximum life, it is recommended that channel temperature be maintained at the lowest possible level.
triquint semiconductor texas pho ne : (972)994 8465 fax: (972) 994 8504 web: www.triquint.com product data sheet TGA8622-SCC 5 note symbol test conditions limits min max units i dss 0.5 vds 3.5v 156 340 ma vgs=0.0v 156 444 gm 0.5 vds 3.5v 180 240 ms vgs=-o.5v 144 240 1 / | vp | 0.5 vds 3.5v ids=600 ua 1.1 4.4 v 1 /| v brgd | i gd =1200 ua 8 30 v 1/ | v brgs |i gs = 1200 ua. 8 30 v 1 / vp, v brgd , v brgs are negative table ii dc probe tests (100%) (ta = 25 degrees c + 5 degrees c) 1 / gain drift shall be defined as the change in sma ll signal gain from the application of dc power to 30 minutes . table iii rf wafer characterization tests (ta = 25 degrees c + 5 degrees c) (bias: v+=6 v, i+=0.5 i dss , v ctrl =l.5 v)
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 6 table iv autoprobe fet parameter measurement conditons fet parameters test conditions i dss : maximum drain current (i ds ) with gate voltage (v gs ) at zero volts. v gs = 0.0 v, drain voltage (v ds ) is swept from 0.5 v up to a maximum of 3.5 v in search of the maximum value of i ds ; voltage for i dss is recorded as vdsp. g m : transconductance; i dss ? ids1 () vg1 for all material types, v ds is swept between 0.5 v and vdsp in search of the maximum value of i ds . this maximum i ds is recorded as ids1. for intermediate and power material, ids1 is measured at v gs = vg1 = -0.5 v. for low noise, hfet and phemt material, v gs = vg1 = -0.25 v. for lnbecolc, use v gs = vg1 = -0.10 v. v p : pinch-off voltage; v gs for i ds = 0.5 ma/mm of gate width. v ds fixed at 2.0 v, v gs is swept to bring i ds to 0.5 ma/mm. v bvgd : breakdown voltage, gate-to-drain; gate-to- drain breakdown current (i bd ) = 1.0 ma/mm of gate width. drain fixed at ground, source not connected (floating), 1.0 ma/mm forced into gate, gate-to-drain voltage (v gd ) measured is v bvgd and recorded as bvgd; this cannot be measured if there are other dc connections between gate-drain, gate-source or drain-source. v bvgs : breakdown voltage, gate-to-source; gate-to- source breakdown current (i bs ) = 1.0 ma/mm of gate width. source fixed at ground, drain not connected (floating), 1.0 ma/mm forced into gate, gate-to- source voltage (v gs ) measured is v bvgs and recorded as bvgs; this cannot be measured if there are other dc connections between gate-drain, gate-source or drain-source.
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 7 typical s-parameters TGA8622-SCC the reference planes for s-parameter data include bond wires as specified in the equivalent schematic. the s-parameters are also available on floppy disk and the world wide web. t a = 25 o c, v+ = 6 v, v ctrl = 1.5 v, i+ = 50% i dss frequency s 11 s 21 s 12 s 22 gain (ghz) mag ang() mag ang() mag ang() mag ang() (db) 2.0 0.18 168 2.34 128 0.007 81 0.08 55 7.4 2.5 0.14 150 2.55 108 0.011 59 0.15 -33 8.1 3.0 0.10 148 2.62 87 0.013 37 0.17 -81 8.4 3.5 0.07 175 2.66 66 0.014 16 0.19 -116 8.5 4.0 0.09 -160 2.64 46 0.014 -5 0.19 -143 8.4 4.5 0.12 -153 2.61 26 0.014 -24 0.18 -165 8.3 5.0 0.14 -158 2.57 7 0.014 -37 0.17 176 8.2 5.5 0.16 -166 2.54 -12 0.015 -61 0.14 160 8.1 6.0 0.17 -177 2.49 -30 0.015 -81 0.11 152 7.9 6.5 0.18 172 2.47 -48 0.016 -99 0.07 163 7.8 7.0 0.17 163 2.46 -66 0.016 -118 0.08 -166 7.8 7.5 0.14 159 2.46 -84 0.018 -136 0.11 -149 7.8 8.0 0.12 159 2.44 -103 0.020 -155 0.15 -149 7.8 8.5 0.09 166 2.43 -121 0.021 -172 0.17 -152 7.7 9.0 0.09 -174 2.42 -139 0.023 171 0.18 -153 7.7 9.5 0.12 -161 2.41 -158 0.024 155 0.17 -157 7.7 10.0 0.17 -157 2.40 -177 0.025 139 0.16 -160 7.6 10.5 0.22 -157 2.38 165 0.026 124 0.15 -165 7.5 11.0 0.26 -160 2.36 147 0.026 108 0.13 -167 7.4 11.5 0.27 -162 2.35 128 0.026 91 0.12 -167 7.4 12.0 0.26 -165 2.35 110 0.025 77 0.13 -167 7.4 12.5 0.24 -169 2.38 91 0.025 61 0.14 -172 7.5 13.0 0.23 -174 2.36 71 0.025 44 0.17 172 7.5 13.5 0.22 -178 2.35 53 0.025 25 0.17 144 7.4 14.0 0.21 -175 2.38 33 0.025 4 0.14 120 7.5 14.5 0.22 -169 2.38 12 0.027 -18 0.10 100 7.5 15.0 0.25 -164 2.38 -8 0.028 -41 0.06 80 7.5 15.5 0.26 -162 2.39 -29 0.030 -62 0.02 2 7.6 16.0 0.26 -162 2.36 -51 0.031 -84 0.07 -122 7.5 16.5 0.26 -166 2.31 -72 0.033 -104 0.13 -151 7.3 17.0 0.26 -170 2.33 -93 0.036 -125 0.19 -175 7.3 17.5 0.28 -172 2.31 -116 0.038 -146 0.25 159 7.3 18.0 0.33 -174 2.22 -138 0.035 -166 0.31 133 6.9 18.5 0.33 -174 2.19 -159 0.037 -174 0.36 114 6.8 19.0 0.36 -169 2.21 179 0.042 163 0.37 98 6.9 19.5 0.38 -167 2.29 155 0.041 140 0.29 95 7.2 20.0 0.40 -164 2.28 125 0.040 119 0.28 133 7.1
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 8 TGA8622-SCC equivalent schematic rf input rf output v+ v- vctrl inductor (2 more places)
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 9 TGA8622-SCC recommended bias circuit rf connections: bond using two 1.0-mil diameter, 20-mil-length gold bond wires at both rf input and rf output. measuring i dss : set v-, v+, and v ctrl to 0 v. connect v ctrl to v+. short v- to ground. increase v+, v ctrl from 0 v and measure i+ maximum for v+, v ctrl triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 10 TGA8622-SCC gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing
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